ELECTROPHYSICAL PROPERTIES OF SEMIINSULAT ING CDTE CRYSTALS OF DIFFERENT STRUCTURAL PERFECTION

Authors
SAVITSKY AV ILASHCHUK MI PARFENYUK OA SHAFRANYUK VP ULIANITSKY KS
Citation
Av. Savitsky et al., ELECTROPHYSICAL PROPERTIES OF SEMIINSULAT ING CDTE CRYSTALS OF DIFFERENT STRUCTURAL PERFECTION, UKRAINSKII FIZICHESKII ZHURNAL, 39(3-4), 1994, pp. 461-463
Citations number
10
Categorie Soggetti
Physics
Journal title
UKRAINSKII FIZICHESKII ZHURNAL → ACNP
ISSN journal
02023628
Volume
39
Issue
3-4
Year of publication
1994
Pages
461 - 463
Database
ISI
SICI code
0202-3628(1994)39:3-4<461:EPOSIC>2.0.ZU;2-1
Abstract
The electrophysical and structural properties of semiinsulating CdTe g rown at various technological conditions have been investigated. The p resence of a great number of coherent twinning boundaries is shown to result in a significant decrease of the charge carrier mobility mu(H). Tellurium inclusions were found in the samples under study. It is det ermined that the inclusions of the size of 10 - 15 mu m and of the den sity of similar to 10(3) cm(-2) have practically no effect on the valu e mu(H) in the temperature range under study.