PHOTOELECTRIC PROPERTIES OF THE SILICON S EMICONDUCTOR WITH MODIFYINGLANGMUIR-BLODGETT-FILM

The influence of Langmuir - Blodgett (LB) films of the molecules with different electron properties on the short-circuit photocurrent in the monocrystal Si with a p-n junction is discussed. The experiment shows that the deposition of several layers of amphiphilic ionic compounds, molecules of which have large (similar to 10 D) constant dipole momen ts, results in the asymmetric change of spectral photosensibility of S i. The desensibility of photoeffect in a short-wavelength range and th e photocurrent increase in a peak as well as in a long wave range are found. The estimation of the effect studied indicates that the photocu rreut change is likely to be associated with interaction of the field of oriented dipoles in LB Films with the semiconductor surface charge.