SCATTERING OF CURRENT CARRIERS IN ANNEALE D CZOCHRALSKY CRYSTALS OF SI

Authors
BABICH VM BARAN NP KIRITSA VL KOVALCHUK VB SKOROKHOD MY
Citation
Vm. Babich et al., SCATTERING OF CURRENT CARRIERS IN ANNEALE D CZOCHRALSKY CRYSTALS OF SI, UKRAINSKII FIZICHESKII ZHURNAL, 39(3-4), 1994, pp. 481-485
Citations number
17
Categorie Soggetti
Physics
Journal title
UKRAINSKII FIZICHESKII ZHURNAL → ACNP
ISSN journal
02023628
Volume
39
Issue
3-4
Year of publication
1994
Pages
481 - 485
Database
ISI
SICI code
0202-3628(1994)39:3-4<481:SOCCIA>2.0.ZU;2-D
Abstract
It is shown that thermo-annealing of oxygen-containing silicon crystal s of both n- and p-type in the temperature interval from 450 to 1100 d egrees C leads to appearance of two additional scattering mechanisms, i.e., scattering on oxygen precipitates as well as scattering on space charge regions which are formed due to a nonuniform overcompensation of p-type Si into n-type induced by thermodonors. The latter mechanism is characteristic For p-type silicon only.