INTERACTION OF SURFACE ELECTROACOUSTIC WA VES WITH CHARGE-CARRIERS INPIEZOSEMICONDUCTORS

The inelastic scattering of charge carriers hy surface electroacoustic waves is investigated. The collisionless damping of these waves propa gating along the piezosemiconductor - vacuum boundary is received for different laws of energy distribution of electrons. It is shown that a mplification of surface electroacoustic waves by the electron current crossing the interface of media is possible for the structure of piezo semiconductor - metal. The damping and amplification of waves take pla ce under arbitrary correlations between the velocity of charge carrier s and a phase velocity of the wave.