An ultrahigh-speed 72-kb ECL-CMOS RAM macro for a 1-Mb SRAM with 0.65-
ns address-access time, 0.80-ns write-pulse width, and 30.24-mu m(2) m
emory cells has been developed using 0.3-mu m BiCMOS technology, Two k
ey techniques for achieving ultrahigh speed are an ECL decoder/driver
circuit with a BiCMOS inverter and a write-pulse generator with a repl
ica memory cell, These circuit techniques can reduce access time and w
rite-pulse width of the 72-kb RAM macro to 71% and 58% of those of RAM
macros with conventional circuits, In order to reduce crosstalk noise
for CMOS memory-cell arrays driven at extremely high speeds, a twiste
d bit-line structure with a normally on MOS equalizer is proposed, The
se techniques are especially useful for realizing ultrahigh-speed, hig
h-density SRAM's, which have been used as cache and control storages i
n mainframe computers.