INP TUNNEL-JUNCTIONS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY ON INP AND INP-ON-SI SUBSTRATES

p(++)/n(++) InP tunnel diodes have been fabricated for the first time on InP and Si substrates by solid source Atomic Layer Molecular Beam E pitaxy (ALMBE) at low temperature. The high peak current density excee ding 200 A/cm(2) and the low specific resistance exhibited in these di odes indicate that they are appropriate to use as optically transparen t interconnects in InP/Ga0.47In0.53As tandem solar cells. This is a ve ry promising result for the use of solid source ALMBE for fabricating these tandem solar cells with a technological process compatible with low temperature technologies, as the conventional silicon technologies .