BORON CHANNELING IMPLANTATIONS IN SILICON - MODELING OF ELECTRONIC STOPPING AND DAMAGE ACCUMULATION

Authors
HOBLER G SIMIONESCU A PALMETSHOFER L TIAN C STINGEDER G
Citation
G. Hobler et al., BORON CHANNELING IMPLANTATIONS IN SILICON - MODELING OF ELECTRONIC STOPPING AND DAMAGE ACCUMULATION, Journal of applied physics, 77(8), 1995, pp. 3697-3703
Citations number
34
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
8
Year of publication
1995
Pages
3697 - 3703
Database
ISI
SICI code
0021-8979(1995)77:8<3697:BCIIS->2.0.ZU;2-V