ER-RELATED DEEP CENTERS IN GAAS DOPED WITH ER BY ION-IMPLANTATION ANDMOLECULAR-BEAM EPITAXY

Authors
ELSAESSER DW YEO YK HENGEHOLD RL EVANS KR PEDROTTI FL
Citation
Dw. Elsaesser et al., ER-RELATED DEEP CENTERS IN GAAS DOPED WITH ER BY ION-IMPLANTATION ANDMOLECULAR-BEAM EPITAXY, Journal of applied physics, 77(8), 1995, pp. 3919-3926
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
8
Year of publication
1995
Pages
3919 - 3926
Database
ISI
SICI code
0021-8979(1995)77:8<3919:EDCIGD>2.0.ZU;2-K