IMPROVED SI3N4 SI/GAAS METAL-INSULATOR-SEMICONDUCTOR INTERFACES BY IN-SITU ANNEAL OF THE AS-DEPOSITED SI/

Authors
TAO M BOTCHKAREV AE PARK D REED J CHEY SJ VANNOSTRAND JE CAHILL DG MORKOC H
Citation
M. Tao et al., IMPROVED SI3N4 SI/GAAS METAL-INSULATOR-SEMICONDUCTOR INTERFACES BY IN-SITU ANNEAL OF THE AS-DEPOSITED SI/, Journal of applied physics, 77(8), 1995, pp. 4113-4115
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
8
Year of publication
1995
Pages
4113 - 4115
Database
ISI
SICI code
0021-8979(1995)77:8<4113:ISSMIB>2.0.ZU;2-W