This paper presents the development of a 140-GHz monolithic low noise
amplifier (LNA) using 0.1-mu m pseudomorphic InAlAs/InGaAs/InP low noi
se HEMT technology, A two-stage single-ended 140-GHz monolithic LNA ha
s been designed, fabricated and tested, It exhibits a measured small s
ignal gain of 9 dB at 142 GHz, and more than 5-dB gain from 138-145 GH
z. This is the highest frequency monolithic amplifier ever reported us
ing three terminal devices.