EFFECT OF MGO ADDITION ON THE BONDABILITY AND INTERFACIAL REACTION BETWEEN DIELECTRIC AND GLASS-CERAMICS FOR THE FABRICATION OF MULTICOMPONENT CERAMIC SUBSTRATES
T. Kimura et al., EFFECT OF MGO ADDITION ON THE BONDABILITY AND INTERFACIAL REACTION BETWEEN DIELECTRIC AND GLASS-CERAMICS FOR THE FABRICATION OF MULTICOMPONENT CERAMIC SUBSTRATES, The Journal of adhesion, 47(1-3), 1994, pp. 179-190
Bondability and interfacial reaction between dielectric and insulator
layers have been examined to obtain a basic understanding of bonding m
echanisms; Lead-containing complex perovskite was used as a dielectric
material. Two kinds of glass-ceramics were used as insulator material
; lead borosilicate glass containing Al2O3 (insulator A) and the same
containing Al2O3 and MgO (insulator B). Dielectric and insulator layer
s did not bond when insulator A was used. When insulator B was used, h
owever, strong bonding was achieved between the two layers by firing t
he powder compacts at temperatures between 800 degrees and 1000 degree
s C. Addition of MgO to lead borosilicate glass increased the thermal
expansion coefficient to that of the dielectric and enhanced the forma
tion of reaction layers, resulting in good bonding. Two reaction layer
s were identified. The main reaction products were enstatite and bredi
gite for one-layer contacting the dielectric, and enstatite and a comp
ound with the same diffraction pattern as that of faujasite for the ot
her layers contacting insulator B.