EFFECT OF MGO ADDITION ON THE BONDABILITY AND INTERFACIAL REACTION BETWEEN DIELECTRIC AND GLASS-CERAMICS FOR THE FABRICATION OF MULTICOMPONENT CERAMIC SUBSTRATES

Citation
T. Kimura et al., EFFECT OF MGO ADDITION ON THE BONDABILITY AND INTERFACIAL REACTION BETWEEN DIELECTRIC AND GLASS-CERAMICS FOR THE FABRICATION OF MULTICOMPONENT CERAMIC SUBSTRATES, The Journal of adhesion, 47(1-3), 1994, pp. 179-190
Citations number
9
Categorie Soggetti
Engineering, Chemical","Material Science
Journal title
ISSN journal
00218464
Volume
47
Issue
1-3
Year of publication
1994
Pages
179 - 190
Database
ISI
SICI code
0021-8464(1994)47:1-3<179:EOMAOT>2.0.ZU;2-V
Abstract
Bondability and interfacial reaction between dielectric and insulator layers have been examined to obtain a basic understanding of bonding m echanisms; Lead-containing complex perovskite was used as a dielectric material. Two kinds of glass-ceramics were used as insulator material ; lead borosilicate glass containing Al2O3 (insulator A) and the same containing Al2O3 and MgO (insulator B). Dielectric and insulator layer s did not bond when insulator A was used. When insulator B was used, h owever, strong bonding was achieved between the two layers by firing t he powder compacts at temperatures between 800 degrees and 1000 degree s C. Addition of MgO to lead borosilicate glass increased the thermal expansion coefficient to that of the dielectric and enhanced the forma tion of reaction layers, resulting in good bonding. Two reaction layer s were identified. The main reaction products were enstatite and bredi gite for one-layer contacting the dielectric, and enstatite and a comp ound with the same diffraction pattern as that of faujasite for the ot her layers contacting insulator B.