THE ION-IMPLANTATION OF IMPURITIES INTO S ILICON SINGLE-CRYSTALS - THE EFFICIENCY OF THIS METHOD AND THE RADIATION-DAMAGE

The ion implantation is analyzed from the point of view of its efficie ncy as a method of doping of silicon by donor and acceptor impurities, of the synthesis of compounds including silicon, of the creation of g ettering layers and optoelectronic structures. The processes of the in troduction and accumulation of impurities, as well as the annealing of the radiation damage in silicon in ion-implanted silicon are analyzed . Special attention is given to the behavior of interstitial defects. The mechanisms of athermal migration of silicon atoms in the crystal l attice are described.