ACCUMULATION OF STABLE OPTICAL-CENTERS IN SILICA GLASSES UNDER PULSE BEAM IRRADIATION

Citation
Vt. Gritsyna et al., ACCUMULATION OF STABLE OPTICAL-CENTERS IN SILICA GLASSES UNDER PULSE BEAM IRRADIATION, Journal of nuclear materials, 237, 1996, pp. 1310-1317
Citations number
12
Categorie Soggetti
Nuclear Sciences & Tecnology","Mining & Mineral Processing","Material Science
ISSN journal
00223115
Volume
237
Year of publication
1996
Part
B
Pages
1310 - 1317
Database
ISI
SICI code
0022-3115(1996)237:<1310:AOSOIS>2.0.ZU;2-C
Abstract
Stable optical centres production under 10 MeV electron irradiation we re investigated in three types of commercial silica glasses with diffe rent concentrations of the OH-group in the range 10(-2)-10(-4)%. The d ependencies of absorption coefficient at wavelength 215 nm (alpha(215) ) on absorbed dose show the saturation at doses greater than or equal to 2 MGy for glasses with high concentrations of the OH-group. At a fi xed dose of 0.56 MGy measurements of alpha(215) dependencies at temper ature 310 K on electron pulse repetition rate (f) gives a substantial increase of efficiency of defects production at high value of f, that indicates the existence of transition effects in the time interval (De lta tau) between electron pulses with a life time in ms range. Measure d dependencies alpha(215) = f(Delta tau) at temperatures 520 and 620 K show the intensification of radiation annealing process, that leads t o very low efficiency of stable defect production at high electron pul se repetition rate.