Skb. Lo et H. Ghafourishiraz, A METHOD TO DETERMINE THE ABOVE-THRESHOLD STABILITY OF DISTRIBUTED-FEEDBACK SEMICONDUCTOR-LASER DIODES, Journal of lightwave technology, 13(4), 1995, pp. 563-568
An analysis of the above-threshold stability of distributed feedback (
DFB) semiconductor laser diodes (LD's) is presented. It is based on a
numerical model which takes into account effects of spatial hole burni
ng (SHE) and the nonlinear gain coefficient, In the analysis, the Newt
on-Raphson (NR) technique has not been used, and no functional derivat
ive is required, Taking into account the presence of another nonlasing
mode, the single-mode stability of the DFB laser diodes is determined
, The proposed model does not depend on any particular DFB structure,
and hence can be applied to various DFB LD structures, Numerical resul
ts are presented for a three-phase-shift (3PS) DFB LD.