MODELING THE FIELD AND THERMAL-DEPENDENCE OF RADIATION-INDUCED CHARGEANNEALING IN MOS DEVICES

Authors
EMELIANOV VV SOGOYAN AV MESHUROV OV ULIMOV VN PERSHENKOV VS
Citation
Vv. Emelianov et al., MODELING THE FIELD AND THERMAL-DEPENDENCE OF RADIATION-INDUCED CHARGEANNEALING IN MOS DEVICES, IEEE transactions on nuclear science, 43(6), 1996, pp. 2572-2578
Citations number
12
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
43
Issue
6
Year of publication
1996
Part
1
Pages
2572 - 2578
Database
ISI
SICI code
0018-9499(1996)43:6<2572:MTFATO>2.0.ZU;2-0
Abstract
Modeling of the field and thermal dependencies of radiation-induced ch arge annealing, based on the assumption that the energy level of defec ts in the oxide located within the Si forbidden gap, is described and verified. A novel conception of thermoactivated nature of tunneling ex change between the defects and Si substrate is proposed.