PROPOSED 2-LEVEL ACCEPTOR-DONOR (AD) CENTER AND THE NATURE OF SWITCHING TRAPS IN IRRADIATED MOS STRUCTURES

Authors
PERSHENKOV VS CHEREPKO SV SOGOYAN AV BELYAKOV VV ULIMOV VN ABRAMOV VV SHALNOV AV RUSANOVSKY VI
Citation
Vs. Pershenkov et al., PROPOSED 2-LEVEL ACCEPTOR-DONOR (AD) CENTER AND THE NATURE OF SWITCHING TRAPS IN IRRADIATED MOS STRUCTURES, IEEE transactions on nuclear science, 43(6), 1996, pp. 2579-2586
Citations number
29
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
43
Issue
6
Year of publication
1996
Part
1
Pages
2579 - 2586
Database
ISI
SICI code
0018-9499(1996)43:6<2579:P2A(CA>2.0.ZU;2-K
Abstract
A phenomenological model of switching traps in irradiated metal-oxide- semiconductor (MOS) structures is presented. After electron capture, E (gamma)' center is supposed to be transformed into new defect that is responsible for switching behavior. This new defect is assumed to have two energy levels (acceptor- and donor-like) and could easily communi cate with substrate free carriers. Energy level position of the E(gamm a)', center, latent build-up of interface traps and negative oxide-tra pped charge are also discussed.