A. Pesce et al., COMPARISON OF BEAM BLANKING SEM AND HEAVY-ION SEU TESTS ON NASDA 64KBIT SRAMS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2856-2861
Beam Blanking SEM (Beam Blanking Scanning Electron Microscope) was suc
cessfully used to measure and to map soft error sites on 64kbit memory
cells. Cross-section versus beam current and LET curves derived from
BBSEM and heavy ion tests, respectively, have been compared. A linear
relation between BBBSEM current and heavy ion LET has been suggested.