COMPARISON OF BEAM BLANKING SEM AND HEAVY-ION SEU TESTS ON NASDA 64KBIT SRAMS

Citation
A. Pesce et al., COMPARISON OF BEAM BLANKING SEM AND HEAVY-ION SEU TESTS ON NASDA 64KBIT SRAMS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2856-2861
Citations number
14
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
ISSN journal
00189499
Volume
43
Issue
6
Year of publication
1996
Part
1
Pages
2856 - 2861
Database
ISI
SICI code
0018-9499(1996)43:6<2856:COBBSA>2.0.ZU;2-V
Abstract
Beam Blanking SEM (Beam Blanking Scanning Electron Microscope) was suc cessfully used to measure and to map soft error sites on 64kbit memory cells. Cross-section versus beam current and LET curves derived from BBSEM and heavy ion tests, respectively, have been compared. A linear relation between BBBSEM current and heavy ion LET has been suggested.