SEGR AND SEB IN N-CHANNEL POWER MOSFETS

Authors
ALLENSPACH M DACHS C JOHNSON GH SCHRIMPF RD LORFEVRE E PALAU JM BREWS JR GALLOWAY KF TITUS JL WHEATLEY CF
Citation
M. Allenspach et al., SEGR AND SEB IN N-CHANNEL POWER MOSFETS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2927-2931
Citations number
14
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
43
Issue
6
Year of publication
1996
Part
1
Pages
2927 - 2931
Database
ISI
SICI code
0018-9499(1996)43:6<2927:SASINP>2.0.ZU;2-N
Abstract
For particular bias conditions, it is shown that a device can fail due to either single-event gate rupture (SEGR) or to single-event burnout (SEB). The likelihood of triggering SEGR is shown to be dependent on the ion impact position. Hardening techniques are suggested.