A PHYSICAL INTERPRETATION FOR THE SINGLE-EVENT-GATE-RUPTURE CROSS-SECTION OF N-CHANNEL POWER MOSFETS

Authors
JOHNSON GH GALLOWAY KF SCHRIMPF RD TITUS JL WHEATLEY CF ALLENSPACH M DACHS C
Citation
Gh. Johnson et al., A PHYSICAL INTERPRETATION FOR THE SINGLE-EVENT-GATE-RUPTURE CROSS-SECTION OF N-CHANNEL POWER MOSFETS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2932-2937
Citations number
14
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
43
Issue
6
Year of publication
1996
Part
1
Pages
2932 - 2937
Database
ISI
SICI code
0018-9499(1996)43:6<2932:APIFTS>2.0.ZU;2-2
Abstract
The single-event-gate-rupture cross-section is measured as a function of drain-source and gate-source bias for some n-channel power MOSFETs. The experimental techniques are explained, and the results are interp reted with the help of two-dimensional computer modeling.