ENHANCED TOTAL-DOSE DAMAGE IN JUNCTION FIELD-EFFECT TRANSISTORS AND RELATED LINEAR INTEGRATED-CIRCUITS

Enhanced total dose damage of Junction Field-effect Transistors (JFETs ) due to low dose rate and/or elevated temperature has been investigat ed for elementary p-channel structures fabricated on bulk and SOI subs trates as well as for related linear integrated circuits. All these de vices were fabricated with conventional junction isolation (field oxid e). Large increases in damage have been revealed by performing high te mperature and/or low dose rate irradiations. These results are consist ent with precious studies concerning bipolar field oxides under low-fi eld conditions. They suggest that the transport of radiation-induced h oles through the oxide is the underlying mechanism. Such an enhanced d egradation must be taken into account for Ion dose rate effects on lin ear integrated circuits.