RADIATION RESPONSE OF P-I-P DIODES ON DIAMOND SUBSTRATES OF VARIOUS TYPE - ELECTRICAL-PROPERTIES OF SEMICONDUCTOR-INSULATOR HOMOJUNCTIONS

Double-junction p-i-p diodes are fabricated on natural and synthetic d iamond crystals and polycrystalline CVD diamond films and subjected to gamma, e(-) and neutron exposure. Parameters of the radiation induced defects (concentration and energy distribution of donor-like traps) a re evaluated from the experimental I-V curves using a technique which is based on a model of thermionic injection of holes into the insulati ng diamond over p-i potential barrier. The evaluated parameters of the traps are used for 2-D numerical simulation of radiation effects on d iamond based p-i(SiO2)-p solid state triode.