ELEVATED-TEMPERATURE IRRADIATION OF BIPOLAR LINEAR MICROCIRCUITS

Citation
Rl. Pease et M. Gehlhausen, ELEVATED-TEMPERATURE IRRADIATION OF BIPOLAR LINEAR MICROCIRCUITS, IEEE transactions on nuclear science, 43(6), 1996, pp. 3161-3166
Citations number
7
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
ISSN journal
00189499
Volume
43
Issue
6
Year of publication
1996
Part
1
Pages
3161 - 3166
Database
ISI
SICI code
0018-9499(1996)43:6<3161:EIOBLM>2.0.ZU;2-B
Abstract
In this study three conventional bipolar linear microcircuits, the LM1 01A operational amplifier, the LM124 quad operational. amplifier, and the LM139 quad voltage comparator, were irradiated at high dose rate, elevated temperature and the results compared to low dose rate, room t emperature response. While the high dose rate degradation at elevated temperature was greater than the degradation at room temperature, it w as not as great as the degradation at low dose rate. Therefore, a hard ness assurance test using elevated temperature irradiation at higher d ose rates, designed to bound the very low dose rate response, will pro bably have to include overtest.