THE USE OF CONVERSION MODEL FOR CMOS IC PREDICTION IN-SPACE ENVIRONMENTS

A physical model for total dose sensitive MOSFET parameters suitable f or extrapolation of laboratory test results to the results expected in space environments is developed With respect to models based on linea r response theory it provides the expansion of properly described time and dose-rate ranges. This model can be shown to be a linear function of one specially built variable thus providing robust parameter fitti ng and precise extrapolation. The model is used for MOSFET prediction in low dose-rate irradiation environments.