IN-SITU MONITORING OF INTERNAL SURFACE-AREA DURING THE GROWTH OF POROUS SILICON

Authors
PETER LM RILEY DJ WIELGOSZ RI
Citation
Lm. Peter et al., IN-SITU MONITORING OF INTERNAL SURFACE-AREA DURING THE GROWTH OF POROUS SILICON, Applied physics letters, 66(18), 1995, pp. 2355-2357
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
18
Year of publication
1995
Pages
2355 - 2357
Database
ISI
SICI code
0003-6951(1995)66:18<2355:IMOISD>2.0.ZU;2-M