CRYSTALLINE QUALITY OF STRAIN-FREE GAAS-ON-SI STRUCTURES FORMED BY ANNEALING UNDER ULTRAHIGH PRESSURE

Authors
ISHIWARA H HOSHINO T KATAHAMA H
Citation
H. Ishiwara et al., CRYSTALLINE QUALITY OF STRAIN-FREE GAAS-ON-SI STRUCTURES FORMED BY ANNEALING UNDER ULTRAHIGH PRESSURE, Applied physics letters, 66(18), 1995, pp. 2373-2375
Citations number
3
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
18
Year of publication
1995
Pages
2373 - 2375
Database
ISI
SICI code
0003-6951(1995)66:18<2373:CQOSGS>2.0.ZU;2-N