PASSIVATION OF OXIDATION-INDUCED DEFECTS IN SILICON

Authors
CORREIA A BALLUTAUD D BOUTRYFORVEILLE A
Citation
A. Correia et al., PASSIVATION OF OXIDATION-INDUCED DEFECTS IN SILICON, Applied physics letters, 66(18), 1995, pp. 2394-2396
Citations number
23
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
18
Year of publication
1995
Pages
2394 - 2396
Database
ISI
SICI code
0003-6951(1995)66:18<2394:POODIS>2.0.ZU;2-F