SENSITIVE HIGH-T-C TRANSITION EDGE BOLOMETER ON A MICROMACHINED SILICON MEMBRANE

Authors
NEFF H LAUKEMPER J KHREBTOV IA TKACHENKO AD STEINBEISS E MICHALKE W BURNUS M HEIDENBLUT T HEFLE G SCHWIERZI B
Citation
H. Neff et al., SENSITIVE HIGH-T-C TRANSITION EDGE BOLOMETER ON A MICROMACHINED SILICON MEMBRANE, Applied physics letters, 66(18), 1995, pp. 2421-2423
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
18
Year of publication
1995
Pages
2421 - 2423
Database
ISI
SICI code
0003-6951(1995)66:18<2421:SHTEBO>2.0.ZU;2-U