EPITAXIAL GAAS P-N STRUCTURES ON SI SUBSTRATES - ELECTRICAL, PHOTOELECTRIC, AND ELECTROLUMINESCENCE PROPERTIES

Authors
EVSTROPOV VV ZHILYAEV YV NAZAROV N SADOFEV YG TOPCHII AN FALEEV NN FEDOROV LM SHERNYAKOV YM
Citation
Vv. Evstropov et al., EPITAXIAL GAAS P-N STRUCTURES ON SI SUBSTRATES - ELECTRICAL, PHOTOELECTRIC, AND ELECTROLUMINESCENCE PROPERTIES, Semiconductors, 29(3), 1995, pp. 195-198
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
29
Issue
3
Year of publication
1995
Pages
195 - 198
Database
ISI
SICI code
1063-7826(1995)29:3<195:EGPSOS>2.0.ZU;2-X