VARIATION OF THE PROPERTIES OF THE CENTERS WHICH FORM DEEP LEVELS IN CALCIUM-FLUORIDE GROWN ON SILICON WITH THE CONDITIONS OF MOLECULAR-BEAM EPITAXY

Authors
ALVAREZ J BERMAN LS KARIMOV IN
Citation
J. Alvarez et al., VARIATION OF THE PROPERTIES OF THE CENTERS WHICH FORM DEEP LEVELS IN CALCIUM-FLUORIDE GROWN ON SILICON WITH THE CONDITIONS OF MOLECULAR-BEAM EPITAXY, Semiconductors, 29(3), 1995, pp. 206-210
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
29
Issue
3
Year of publication
1995
Pages
206 - 210
Database
ISI
SICI code
1063-7826(1995)29:3<206:VOTPOT>2.0.ZU;2-J