GENERATION OF ELECTRON-HOLE PAIRS AT THE SURFACE OF A SEMICONDUCTOR IN THE FRINGING FIELDS OF MACROSCOPIC CHARGED CLUSTERS - EFFECTS OF ELECTRICAL INHOMOGENEITIES OF VARIOUS LENGTH SCALES

Authors
GOLDMAN EI ZHDAN AG
Citation
Ei. Goldman et Ag. Zhdan, GENERATION OF ELECTRON-HOLE PAIRS AT THE SURFACE OF A SEMICONDUCTOR IN THE FRINGING FIELDS OF MACROSCOPIC CHARGED CLUSTERS - EFFECTS OF ELECTRICAL INHOMOGENEITIES OF VARIOUS LENGTH SCALES, Semiconductors, 29(3), 1995, pp. 219-224
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
29
Issue
3
Year of publication
1995
Pages
219 - 224
Database
ISI
SICI code
1063-7826(1995)29:3<219:GOEPAT>2.0.ZU;2-K