EFFECT OF COMPETING PRECIPITATION CENTERS ON THE DISTRIBUTION OF NITROGEN-IMPLANTED IN SI DURING THE FORMATION OF BURIED LAYERS

Authors
KACHURIN GA TYSCHENKO IE TIIS SA PLOTNIKOV AE
Citation
Ga. Kachurin et al., EFFECT OF COMPETING PRECIPITATION CENTERS ON THE DISTRIBUTION OF NITROGEN-IMPLANTED IN SI DURING THE FORMATION OF BURIED LAYERS, Semiconductors, 29(3), 1995, pp. 256-258
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
29
Issue
3
Year of publication
1995
Pages
256 - 258
Database
ISI
SICI code
1063-7826(1995)29:3<256:EOCPCO>2.0.ZU;2-S