BENZOYLPIVALOYLMETHANIDE PRECURSORS FOR THE CHEMICAL BEAM EPITAXY OF OXIDE THIN-FILMS .1. SYNTHESIS, CHARACTERIZATION, AND USE OF YTTRIUM BENZOYLPIVALOYLMETHANIDE

Authors
FRITSCH E MACHLER E ARROUY F ORAMA O BERKE H POVEY I WILLMOTT PR LOCQUET JP
Citation
E. Fritsch et al., BENZOYLPIVALOYLMETHANIDE PRECURSORS FOR THE CHEMICAL BEAM EPITAXY OF OXIDE THIN-FILMS .1. SYNTHESIS, CHARACTERIZATION, AND USE OF YTTRIUM BENZOYLPIVALOYLMETHANIDE, Chemistry of materials, 9(1), 1997, pp. 127-134
Citations number
50
Categorie Soggetti
Chemistry Physical","Material Science
Journal title
Chemistry of materials → ACNP
ISSN journal
08974756
Volume
9
Issue
1
Year of publication
1997
Pages
127 - 134
Database
ISI
SICI code
0897-4756(1997)9:1<127:BPFTCB>2.0.ZU;2-7
Abstract
The new complex yttrium benzoylpivaloylmethanide and its acetonitrile adduct have been characterized by IR, NMR, mass spectroscopy, X-ray st ructure analysis, and thermogravimetric/differential thermal analysis. In situ flux measurements and mass spectroscopic studies have been pe rformed to test the suitability of this compound as a precursor for th e deposition of complex oxide thin films under molecular beam conditio ns. Finally it has been used to deposit epitaxial Y2O3 (001) thin film s on SrTiO3 (001) substrates.