Thin films of AlPO4-5 molecular sieves have been employed as the diele
ctric phase in a capacitance type chemical sensor. AlPO4-5 was deposit
ed onto titanium nitride (bottom electrode) coated silicon wafers by l
aser ablation. A subsequent hydrothermal treatment-of the ablated AlPO
4-5 films was found to enhance the crystallinity. The capacitance sens
or configuration was completed by the deposition of Pd/Au pads (upper
electrode) through a mask. AlPO4-5 based sensors exhibited significant
changes in capacitance upon exposure to small molecules such as CO2,
CO, N-2, and H2O.