HIGH GAIN-BANDWIDTH-PRODUCT SILICON HETEROINTERFACE PHOTODETECTOR

We report the fabrication of a near-infrared avalanche photodetector w ith a gain-bandwidth product of over 300 GHz. The detector uses a Si m ultiplication layer and an InGaAs absorption layer. A 3 dB bandwidth o f over 9 GHz was measured for current gains as high as 35. Photocurren t measurements using 1.3 mu m light indicate a quantum efficiency for the detector of 0.60, near the limit expected based on the absorber th ickness. (C) 1997 American Institute of Physics.