A THIN-FILM DIAMOND P-CHANNEL FIELD-EFFECT TRANSISTOR

Authors
PANG LYS CHAN SSM JACKMAN RB JOHNSTON C CHALKER PR
Citation
Lys. Pang et al., A THIN-FILM DIAMOND P-CHANNEL FIELD-EFFECT TRANSISTOR, Applied physics letters, 70(3), 1997, pp. 339-341
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
70
Issue
3
Year of publication
1997
Pages
339 - 341
Database
ISI
SICI code
0003-6951(1997)70:3<339:ATDPFT>2.0.ZU;2-U
Abstract
A depletion-mode metal-insulator-semiconductor field-effect transistor has been fabricated from thin film polycrystalline diamond with ap-ty pe (boron doped) channel and an insulating diamond gate. This device h as been successfully operated at 300 degrees C displaying pinch off wh en in depletion and high levels of channel current modulation in enhan cement. A transconductance value of 174. mu S/mm has been measured, th e highest reported value to date for this type of device. (C) 1997 Ame rican Institute of Physics.