NANOSECOND TIME-RESOLVED EMISSION-SPECTROSCOPY FROM SILICON IMPLANTEDAND ANNEALED SIO2 LAYERS

Photoluminescence decay curves and nanosecond time-gated spectra were measured from silicon implanted SiO2 layers after thermal annealing. D ifferent ion fluences and annealing times were tested. Three component s emitting blue-green light with lifetimes of about 0.4, 2, and 10 ns were detected. The peak position of all components moves to longer wav elengths upon increasing the ion fluence. This short-wavelength emissi on seems to be related to the presence of extended defects acting as p recursors of nanocrystals. A slower (microsecond) component, centered in the near infrared and attributed to nanocrystals, was also identifi ed in the highest fluence implant considered (3 x 10(17) cm(-2)). (C) 1997 American Institute of Physics.