POSTGROWTH HYDROGEN TREATMENTS OF NONRADIATIVE DEFECTS IN LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL SI

Influence of postgrowth hydrogen treatments on nonradiative recombinat ion centers in undoped and B-doped Si epilayers, grown by molecular be am epitaxy at low temperatures, are studied by optical detection of ma gnetic resonance. Hydrogen passivation of the dominant nonradiative de fects in undoped Si is shown to be rather effective, whereas in the B- doped Si epilayers the effects of the hydrogen treatment of the same d efects are found to be only marginal. Possible mechanisms for this are discussed. Information on two new nonradiative defects is provided. ( C) 1997 American Institute of Physics.