SNTE-DOPING OF GAAS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY

Authors
KUBALL M CARDONA M MAZUELAS A PLOOG KH PEREZCAMACHO JJ SILVEIRA JP BRIONES F
Citation
M. Kuball et al., SNTE-DOPING OF GAAS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY, Journal of applied physics, 77(9), 1995, pp. 4339-4342
Citations number
25
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
77
Issue
9
Year of publication
1995
Pages
4339 - 4342
Database
ISI
SICI code
0021-8979(1995)77:9<4339:SOGGBA>2.0.ZU;2-K