AN ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF VANADIUM-RELATED DEFECTS IN CDTE-V-ZN

The formation of vanadium-related defects and defect complexes in CdTe codoped with Zn and V has been studied using electron paramagnetic re sonance (EPR). Whereas in Zn-free crystals only the V3+ defect and in 5% and 10% Zn-alloyed ZnCdTe only a V2+-X complex were previously obse rved by EPR, both defects are observed simultaneously under thermal eq uilibrium conditions in low-concentration (10(19) cm(-3)) Zn- and V-co doped samples. As a SIMS impurity analysis does not show contamination at the 10(17) cm(-3) level, the model of second nearest neighbour com plexes V-Cd-Zn-Cd seems to be appropriate. The concentration of the V- Cd-Zn-Cd defects is much higher than expected from a statistical distr ibution of Zn and V.