THE (220) LATTICE SPACING OF SILICON

Authors
BASILE G BERGAMIN A CAVAGNERO G MANA G VITTONE E ZOSI G
Citation
G. Basile et al., THE (220) LATTICE SPACING OF SILICON, IEEE transactions on instrumentation and measurement, 44(2), 1995, pp. 526-529
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
IEEE transactions on instrumentation and measurement → ACNP
ISSN journal
00189456
Volume
44
Issue
2
Year of publication
1995
Pages
526 - 529
Database
ISI
SICI code
0018-9456(1995)44:2<526:T(LSOS>2.0.ZU;2-W
Abstract
Further details are given of an experiment based on combined X-ray and optical interferometry to measure the (220) lattice spacing of silico n. A resolution of 5 x 10(-9)d(220) was achieved and the silicon d(220 ) was determined to 3 x 10(-8)d(220) accuracy. The measured value is d (220) = (192015.551 +/- 0.005) fm. After correction for the impurity-i nduced lattice strain, d(220) = (192015.569 +/- 0.006) fm was obtained .