SINUSOIDAL GATE VOLTAGES FOR A 3-GATE SINGLE-ELECTRON PUMP
Citation
A. Fukushima et al., SINUSOIDAL GATE VOLTAGES FOR A 3-GATE SINGLE-ELECTRON PUMP, IEEE transactions on instrumentation and measurement, 44(2), 1995, pp. 561-563
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
SICI code
0018-9456(1995)44:2<561:SGVFA3>2.0.ZU;2-J
Abstract
The characteristics of a three-gate single electron pump with four sma
ll tunnel junctions have been studied by simple calculations. Comparin
g the charging energy of a three-gate pump for different configuration
s of excess electrons, we obtained the equilibrium energy planes in a
three dimensional (3D) gate-voltage space. The polygon formed by the u
nion of the equilibrium energy planes fog all configurations nearest t
o a given configuration is depicted in the 3D space. Inside the polygo
n, the configuration of excess electrons is stable. The pump can be op
erated by applying a set of sinusoidally varying gate voltages, whose
trajector in the 3D space is presented.