DIAMOND JUNCTION COLD-CATHODE

Citation
Gr. Brandes et al., DIAMOND JUNCTION COLD-CATHODE, DIAMOND AND RELATED MATERIALS, 4(5-6), 1995, pp. 586-590
Citations number
17
Categorie Soggetti
Material Science
ISSN journal
09259635
Volume
4
Issue
5-6
Year of publication
1995
Pages
586 - 590
Database
ISI
SICI code
0925-9635(1995)4:5-6<586:DJC>2.0.ZU;2-X
Abstract
Diamond junction cold cathodes composed of a phosphorus doped diamond layer and a boron doped diamond layer have been fabricated and tested. The devices were rectifying and had a large, temperature-dependent se ries resistance that limited the current when the device was forward b iased. Electrons from the device were emitted into the vacuum when the device was forward biased; no emission current was detected from the reverse biased device. The ratio of emitted current to diode current w as approximately 10(-8), the ratio changing little with temperature or bias voltage.