Diamond junction cold cathodes composed of a phosphorus doped diamond
layer and a boron doped diamond layer have been fabricated and tested.
The devices were rectifying and had a large, temperature-dependent se
ries resistance that limited the current when the device was forward b
iased. Electrons from the device were emitted into the vacuum when the
device was forward biased; no emission current was detected from the
reverse biased device. The ratio of emitted current to diode current w
as approximately 10(-8), the ratio changing little with temperature or
bias voltage.