ON THE ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE DIAMOND FILMS ON SILICON

Authors
DECESARE G SALVATORI S VINCENZONI R ASCARELLI P CAPPELLI E PINZARI F GALLUZZI F
Citation
G. Decesare et al., ON THE ELECTRICAL-PROPERTIES OF POLYCRYSTALLINE DIAMOND FILMS ON SILICON, DIAMOND AND RELATED MATERIALS, 4(5-6), 1995, pp. 628-631
Citations number
19
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
4
Issue
5-6
Year of publication
1995
Pages
628 - 631
Database
ISI
SICI code
0925-9635(1995)4:5-6<628:OTEOPD>2.0.ZU;2-Z
Abstract
The electrical behaviour of metal/diamond/silicon structures was inves tigated by current-voltage measurements as a function of temperature i n the range 20-270 degrees C. The results were related to the morpholo gy and composition of the diamond film by a nonlinear electrical model , taking into account both a temperature-independent conductance throu gh highly defective regions and a temperature-dependent field-activate d conductance through bulk diamond grains.