I V CHARACTERISTICS OF EPITAXIAL SCHOTTKY AU BARRIER DIODE ON P(+) DIAMOND SUBSTRATE/

Authors
VESCAN A EBERT W BORST T KOHN E
Citation
A. Vescan et al., I V CHARACTERISTICS OF EPITAXIAL SCHOTTKY AU BARRIER DIODE ON P(+) DIAMOND SUBSTRATE/, DIAMOND AND RELATED MATERIALS, 4(5-6), 1995, pp. 661-665
Citations number
11
Categorie Soggetti
Material Science
Journal title
DIAMOND AND RELATED MATERIALS → ACNP
ISSN journal
09259635
Volume
4
Issue
5-6
Year of publication
1995
Pages
661 - 665
Database
ISI
SICI code
0925-9635(1995)4:5-6<661:IVCOES>2.0.ZU;2-Z
Abstract
Epitaxial p-type Schottky barrier diodes on synthetic p(+) substrates were analysed in terms of their reverse I/V characteristics. A new ele ctronic model was developed to describe the excess leakage current gen erally observed in epitaxial diodes. This current is attributed to hom ogeneously distributed defects, acting only on a small fraction of the diode surface area, bypassing the Schottky barrier contact. Passivati on experiments are reported to reduce their density.