MODELING OF STRESS-INDUCED DIAMOND NUCLEATION

Citation
P. Deak et al., MODELING OF STRESS-INDUCED DIAMOND NUCLEATION, DIAMOND AND RELATED MATERIALS, 4(5-6), 1995, pp. 706-709
Citations number
27
Categorie Soggetti
Material Science
ISSN journal
09259635
Volume
4
Issue
5-6
Year of publication
1995
Pages
706 - 709
Database
ISI
SICI code
0925-9635(1995)4:5-6<706:MOSDN>2.0.ZU;2-L
Abstract
PM3 semi-empirical calculations have been used to model the primary di amond nucleation in the graphite-like initial carbon layer usually pro duced on substrates other than diamond. The effect of quenched-in dens ity increase was simulated by compressing the graphitic environment (r epresented by a small graphite cluster with cyclic boundary conditions ) of a carbon atom with an additional methyl group in its vicinity. Th e critical (linear) compression for the ''sp(2)-->sp(3) phase transfor mation'' of the fourfold coordinated carbon was estimated to be 3%.