Various key aspects of the low-pressure synthesis of cubic boron nitri
de and diamond are compared and discussed. Based on recent thermodynam
ic data for c-BN and h-BN (heats of formation, entropies, specific hea
ts), c-BN should be the stable phase under standard and low-pressure c
onditions. The current problems in c-BN CVD synthesis can be explained
by the empirical rules of Ostwald and Ostwald-Volmer, which show that
the formation of the metastable and less dense phase, h-BN, is favour
ed. Thus, for a successful CVD synthesis of c-BN it is necessary to fi
nd a way to circumvent the natural tendencies of the system. Thermodyn
amic equilibrium calculations for c-BN and h-BN in different gas atmos
pheres suggested a phase-selective reaction by which h-BN could be pre
ferentially etched. Thus a c-BN CVD process similar to that of diamond
should be possible and impingement with energetic ions should not be
required to grow c-BN. However, the atomic attachment kinetic during c
rystal growth caused by the anisotropy of the c-BN crystals (completel
y N- or B-terminated facets), different bonding energies, and differen
ces of bond lengths of B-N, B-B and N-N bends must be taken into consi
deration and could cause problems.