DEFORMATION OF NITROGEN-DOPED CUBIC POLYTYPE SIC

The mechanism of incorporation of nitrogen atoms into the 3C-SiC cryst al lattice is discussed on the basis of comparison of the deformation coefficient, which was derived from experimental values of the normal component of deformation with the calculated values. High quality 3C-S iC epitaxial layers with a high nitrogen doping level were obtained us ing container-free liquid-phase epitaxy. The nitrogen concentration wa s determined by secondary-ion mass spectrometry. To determine the defo rmation, the rocking curves of symmetric Bragg reflections of first an d second orders from {111} planes were measured using an X-ray double- crystal spectrometer.