AN ANALYSIS OF SEM TECHNIQUES USED TO PROFILE CHEMICAL ETCHING ON THESEMICONDUCTOR HG1-XCDXTE

Various methods have been used to obtain accurate cross-sectional prof iles of Hg1-xCdxTe devices after etching. Preliminary measurements fro m different etching techniques are also presented. Techniques used wer e scanning electron microscopy with stereo pairs and cleaved cross-sec tions, topography SEM (multiple detector SEM) and atomic force microsc opy.