AC CHARACTERIZATION OF THE P-INVERTED BURIED-CHANNEL HETEROSTRUCTURE FET AND ITS SUITABILITY FOR COMPLEMENTARY ELECTRONICS

Authors
KIELY PA DOCTER DP VANG TA TAYLOR GW EVALDSSON PA CLAISSE PR TELL B BROWNGOEBELER KF
Citation
Pa. Kiely et al., AC CHARACTERIZATION OF THE P-INVERTED BURIED-CHANNEL HETEROSTRUCTURE FET AND ITS SUITABILITY FOR COMPLEMENTARY ELECTRONICS, IEE proceedings. Circuits, devices and systems, 142(2), 1995, pp. 105-108
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEE proceedings. Circuits, devices and systems → ACNP
ISSN journal
13502409
Volume
142
Issue
2
Year of publication
1995
Pages
105 - 108
Database
ISI
SICI code
1350-2409(1995)142:2<105:ACOTPB>2.0.ZU;2-J
Abstract
The high-frequency characteristics of the inverted p-channel BCHFET ar e presented. A unity current gain frequency of 1.4 GHz for a 1.3 mu m device is obtained. DC operation of a complementary inverter is shown using the n inversion channel NFET and the inverted p-channel BCHFET.