Av. Chelnokov et al., DEEP ERBIUM-YTTERBIUM IMPLANTATION CODOPING OF LOW-LOSS SILICON OXYNITRIDE WAVE-GUIDES, Electronics Letters, 31(8), 1995, pp. 636-638
The authors report the first photoluminescence studies and preliminary
loss modulation measurements on low-loss planar silicon oxynitride op
tical waveguides co-implanted with Er and Yb. Deep high-dose ion impla
ntation is used to create high concentration levels of Er and Yb dopan
ts with the concentration profiles adapted to the guided pump mode (98
0nm). It is found that Yb co-implantation at high concentrations (up t
o 1 atm.%) only reduces the initial Er I-4(13/2) level lifetime (5.3ms
) by less than 30%, while the 980nm pump absorption is greatly increas
ed. Loss modulation at 1.5 mu m is detected in planar waveguides, thus
indicating further possibility of using Er/Yb codoped SiON waveguides
in active integrated optoelectronics.